高周波増幅用　ＭｏｓＦＥＴ　在庫限りの販売です FEATURES ・ High output power : Pout = 26.0 dBm TYP. (VDS = 3.0 V, IDset = 200 mA, f = 2.45 GHz, Pin = 19 dBm) ・ High power added efficiency : ηadd = 45% TYP. (VDS = 3.0 V, IDset = 200 mA, f = 2.45 GHz, Pin = 19 dBm) ・ High linear gain : GL = 11 dB TYP. (VDS = 3.0 V, IDset = 200 mA, f = 2.45 GHz, Pin = 10 dBm) ・ Surface mount package : 5.7 × 5.7 × 1.1 mm MAX. ・ Single supply : VDS = 2.8 to 3.8 V 弊社、パワーアンプに採用、修理、保守用に。 詳しくは下記のホームページをご覧下さい。 https://www.renesas.com/ja/products/ne552r479a (https://www.renesas.com/ja/products/ne552r479a )