高周波増幅用 パワー Mos-FET NE5510279A　在庫限りの販売です FEATURES ・ HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm ・ HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 25 dBm ・ HIGH LINEAR GAIN: 10 dB TYP at VDS = 3.5 V, IDQ = 400 mA, f = 1.8 GHz, PIN = 10 dBm ・ SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX ・ SINGLE SUPPLY: 2.8 to 6.0 V パワーアンプ、修理、保守用に。在庫限り、長期保管品 詳しくは下記のホームページをご覧下さい。 https://www.flqelettronica.it/public/userfiles/ne5510279a_datasheet.pdf (https://www.flqelettronica.it/public/userfiles/ne5510279a_datasheet.pdf)